BTD1383L3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 BTD1383L3 Description The BTD1383L3 is a darlington amplifier transistor. Symbol BTD1383L3 B C Outline SOT-223 C E B：Base C：Collector E：Emitter C E B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP Pd RθJA Tj Tstg Limits 40 32 10 0.3 1.5 (Note 1) 1.5 (Note 2) 83.3 (Note 2) 150 -55~+150 Unit V V V A A W °C/W °C °C Note : 1.Single pulse test, PW=10ms 2 .Device mounted on a glass epoxy printed circuit board 1.575 in × 1.575 in × 0.059 in : mounting pad for the collector lead min 0.93 in². BTD1383L3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 32 10 10K 20K Typ. 250 5 Max. 100 100 1.5 Unit V V V nA nA V Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 2/4 Test Conditions IC=100µA IC=1mA, RBE=0Ω IE=100µA VCB=30V VEB=10V IC=200mA, IB=0.4mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% MHz pF BTD1383L3 CYStek Product Specification CYStech Electronics Corp. Cha...