BTD1383M3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383M3 Spec. No. : C214M3 Issued Date : 2006.11.10 Revised Date : 2013.08.06 Page No. : 1/6 Description The BTD1383M3 is a darlington amplifier transistor. Pb-free package Symbol BTD1383M3 C B Outline SOT-89 B：Base C：Collector E：Emitter E BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCES VEBO IC ICP Power Dissipation Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Tj Storage Temperature Tstg Note : 1. Single Pulse Pw≦350μs, Duty≦2%. 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on a ceramic board with area measuring 40×40×1mm. BTD1383M3 Limits 40 32 10 0.3 1.5 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C214M3 Issued Date : 2006.11.10 Revised Date : 2013.08.06 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 40 32 10 10K 20K - Typ. - 250 5 Max. - 100 100 1.5 - Unit V V V nA nA V MHz pF Test Conditions IC=100μA IC=1mA, RBE=0Ω IE=100μA VCB=30V VEB=10V IC=200mA, IB=0.4mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤3...