CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD1768M3
Spec. No. : C310M3 Issued Date : 2007.01.10 Revised...
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD1768M3
Spec. No. : C310M3 Issued Date : 2007.01.10 Revised Date : 2018.05.07 Page No. : 1/6
Features
High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating and halogen-free package
Symbol
BTD1768M3
Outline
SOT-89
B:Base C:Collector E:Emitter
BCE
Ordering Information
Device BTD1768M3-X-T2-G
Package
SOT-89 (Pb-free lead plating and halogen-free package)
Shipping 1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel
Product rank, zero for no rank products
Product name
BTD1768M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C310M3 Issued Date : 2007.01.10 Revised Date : 2018.05.07 Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm
Limit
100 80 5 1 2 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150
Unit
V V V A A W W W °C/...