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BTD1768N3 Datasheet

Part Number BTD1768N3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description NPN Epitaxial Planar Transistor
Datasheet BTD1768N3 DatasheetBTD1768N3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 1/7 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free lead plating and halogen-free package Symbol BTD1768N3 Outline SOT-.

  BTD1768N3   BTD1768N3






NPN Epitaxial Planar Transistor

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 1/7 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free lead plating and halogen-free package Symbol BTD1768N3 Outline SOT-23 B:Base C:Collector E:Emitter Ordering Information Device BTD1768N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj ; Tstg Limits 100 80 5 1 2 (Note) 225 556 -55~+150 Unit V V V A A mW °C/W °C Characteristics (Ta=25.


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