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BTD1768S3

CYStech

General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : 2017.06.09 Page No. : 1/6 General...


CYStech

BTD1768S3

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CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : 2017.06.09 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768S3 BVCEO IC 80V 1A Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, VCEO=80V (min.) High collector current, IC(max)=1A (DC) Pb-free package Symbol BTD1768S3 Outline SOT-323 B:Base C:Collector E:Emitter Ordering Information Device BTD1768S3-X-T1-G Package SOT-323 (Pb-free and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1768S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : 2017.06.09 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Note : Pulse test, PW ≤ 10ms, Duty ≤ 2%. Limits 180 80 7 1 2 (Note) 200 625 -55~+150 -55~+150 Unit V V V A A mW °C/W °C °C Characteristics (Ta=25°...




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