CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1782N3
Spec. No. : C304N3 Issued Date : 20...
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1782N3
Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 1/6
Description
The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Features
Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA High breakdown
voltage, VCEO=80V (min.) Complements to BTB1198N3 Pb-free package
Symbol
BTD1782N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PD RθJA Tj Tstg
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
BTD1782N3
Limits
80 80 5 0.5 200 625 150 -55~+150
Unit
V V V A mW °C/W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(SAT) *hFE fT Cob
Min.
80 80 5 120 -
Typ.
0.15 180 7.5
Max.
0.5 0.5 0.5 390 -
Unit
V V V μA μA V MHz pF
Test Conditions
IC=50μA IC=2mA IE=50μA VCB=50V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Q
Range
120~270
R 180~390
Ordering ...