BTD1782N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1782N3 Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 1/6 Description The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA High breakdown voltage, VCEO=80V (min.) Complements to BTB1198N3 Pb-free package Symbol BTD1782N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. BTD1782N3 Limits 80 80 5 0.5 200 625 150 -55~+150 Unit V V V A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min. 80 80 5 120 - Typ. 0.15 180 7.5 Max. 0.5 0.5 0.5 390 - Unit V V V μA μA V MHz pF Test Conditions IC=50μA IC=2mA IE=50μA VCB=50V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Q Range 120~270 R 180~390 Ordering ...