BTD1805D3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 1/ 4 BTD1805D3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features Very low collector-to-emitter saturation voltage Fast switching speed High current gain characteristic Large current capability Pb-free package Applications CCFL drivers Voltage regulators Relay drivers High efficiency low voltage switching applications Symbol BTD1805D3 Outline TO-126ML B：Base C：Collector E：Emitter E C B BTD1805D3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 2/ 4 Limits 150 60 7 5 10 (Note 1) 2 1 20 125 8.33 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO I...