CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805FP
Spec. No. : C820FP Issued Date : 2005.03...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805FP
Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No. : 1/ 7
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation
voltage.
Features
Very low collector-to-emitter saturation
voltage Fast switching speed High current gain characteristic Large current capability RoHS compliant package
Symbol
BTD1805FP
Outline
TO-220FP (C forming)
TO-220FP (S forming)
B:Base C:Collector E:Emitter
BCE
BCE
Ordering Information
Device BTD1805FP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name
BTD1805FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No. : 2/ 7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage (IE=0) Collector-Emitter
Voltage (IB=0) Emitter-Base
Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction T...