CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3
BVCEO IC
Spec. No. : C855J3 Issued Date ...
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3
BVCEO IC
Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2017.06.16 Page No. : 1/6
160V 1.5A
Description
High BVCEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package
Symbol
BTD1857AJ3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTD1857AJ3-X-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD1857AJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP
PD
Tj Tstg
Limits
180 160
5 1.5 3 1 10 150 -55~+150
Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2017.06.16 Page No. : 2/6
Unit
V V V A A W W °C °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c Rth,j-a
Value 12.5 125
Unit °C/W °C/W
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *V...