BTD1858T3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1858T3 Spec. No. : C856T3 Issued Date : 2007.03.20 Revised Date : Page No. : 1/7 Description High BVCEO High current capability Pb-free package Symbol BTD1858T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858T3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 180 180 5 1.5 3 (Note) 1 15 125 8.33 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C856T3 Issued Date : 2007.03.20 Revised Date : Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 180 5 180 30 - Typ. 0.15 140 27 Max. 1 1 0.3 0.4 0.8 560 - Unit V V V µA µA V V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA IC=1A, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range R 180~390 S 270~560 Ordering Information ...