CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C822FP Issued Date : 2005.07.29 Revise...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5
BTD2012FP
Features
www.DataSheet4U.com
Low collector-to-emitter saturation
voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A Excellent DC current gain characteristics High allowable power dissipation, PD=25W(TC=25℃) Large current capability Pb-free package
Applications
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Symbol
BTD2012FP
Outline
TO-220FP
B：Base C：Collector E：Emitter
B C E
BTD2012FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current www.DataSheet4U.com Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Insulation Withstand
Voltage (RMS) from All Three Leads to External Heatsink Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Visol Tj Tstg
Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 2/ 5
Limits 80 60 6 3 6 (Note 1) 0.5 2 25 62.5 5 1000 150 -55~+150
Unit V V V A A W °C/W °C/W V °C °C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob...
