BTD2057A3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Date : Page No. : 1/4 BTD2057A3 www.DataSheet4U.com Description High BVCEO High current capability Pb-free package Symbol BTD2057A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 200 200 5 1.5 3 750 150 -55~+150 Unit V V V A A mW °C °C BTD2057A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO www.DataSheet4U.com *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 200 200 5 0.45 82 30 Typ. 140 27 Max. 1 1 0.6 0.8 390 Unit V V V µA µA V V MHz pF Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range P 82~180 Q 120~270 R 180~390 BTD2057A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Tj=125℃ Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Da...