CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 1/4
BTD2097AI3
Features
Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A Excellent current gain characteristics www.DataSheet4U.com Complementary to BTB1412AI3
Symbol
BTD2097AI3
Outline
TO-251
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd@ TA=25℃ Pd@ TC=25℃ Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W °C °C
Note : *1. Single Pulse , Pw≦380µs,Duty≦2%. *2. When mounted on a 40*40*0.7mm ceramic board.
BTD2097AI3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *V CE(sat) www.DataSheet4U.com *hFE fT Cob Min. 50 20 6 120 Typ. 0.35 150 35 Max. 0.5 0.5 1 820 Unit V V V µA µA V MHz pF
Spec. No. : C847I3-D9065T Issued Date : 2003.03.26 Revised Date : Page No. : 2/4
Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50mA, f=100MHz VCB=20V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560 T 390~820
BTD2097AI3
CYStek Product Specification
CYStech Electronics Co...
