BTD2098AM3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2098AM3 Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2013.08.12 Page No. : 1/6 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386AM3 Pb-free package Symbol BTD2098AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg 40 30 6 5 8 0.6 1 2 150 -55~+150 *1 *2 *3 V V V A A W °C °C Note : *1 Single pulse , Pw=10ms *2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm. *3 When mounted on a 40*40*0.7mm ceramic board. BTD2098AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date :2013.08.12 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE *hFE *hFE fT Cob Min. 40 30 6 250 270 150 - Typ. 0.35 150 30 Max. 0.5 0.5 1.0 560 50 Unit V V V μA μA V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.1A VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380us,...