CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850M3 Issued Date : 2004.02.27 Revise...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/5
BTD2098LM3
Features
Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics www.DataSheet4U.com Complementary to BTB1386LM3 Pb-free package
Symbol
BTD2098LM3
Outline
SOT-89
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits 40 15 6 5 8 (Note 1 ) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/W °C/W °C/W °C °C
Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
RθJA Tj Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2.When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area measuring 40×40×1 mm
BTD2098LM3 CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) www.DataSheet4U.com *hFE1 *hFE2 fT Cob Min. 40 15 6 180 160 Typ. 0.25 150 Max. 0.1 0.1 0.5 820 50 Unit V V V µA µA V MHz pF
Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 2/5
Test Conditions IC=50µA, IB=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA ...
