BTD2098LN3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2098LN3 Spec. No. : C850N3 Issued Date : 2004.01.28 Revised Date :2017.10.11 Page No. : 1/7 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free lead plating and halogen-free package Symbol BTD2098LN3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device Package BTD2098LN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD2098LN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C850N3 Issued Date : 2004.01.28 Revised Date :2017.10.11 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current (DC) IC Collector Current (Pulse) ICP Power Dissipation PD Thermal Resistance, junction to ambient RθJA Thermal Resistance, Junction to Case RθJC Junction Temperature Tj Storage Temperature Tstg Note : 1.Single Pulse Pw≦350μs, Duty≦2%. 2.When mounted on a ceramic board with area of 600mm²×0.8mm Limits 25 15 6 5 8 (Note 1) 0.9 (Note 2) 138 100 150 -55~+150 Unit V V V A...