CYStech Electronics Corp.
Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8
High Cu...
CYStech Electronics Corp.
Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8
High Current Gain Medium Power NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BTD2114N3
BVCEO IC
20V 500mA
RCE(SAT) 0.32Ω(typ)
Features
High Emitter-Base
voltage, VEBO=12V(min). High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA. Pb-free and halogen-free package.
Symbol
BTD2114N3
Outline
SOT-23 C
B：Base C：Collector E：Emitter
E B
Ordering Information
Device BTD2114N3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products Product name
BTD2114N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC ICP IB PD RθJA
Tj ; Tstg
Limit
30 20 12 500 1 50 225 556
-55~+150
Unit
V V V mA A mA mW
°C/W °C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
...
