BTD2118T3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD2118T3 Spec. No. : C847T3 Issued Date : 2007.06.26 Revised Date : Page No. : 1/5 Description High BVCEO High current capability Pb-free package Symbol BTD2118T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD2118T3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 30 7 5 8 (Note) 1 15 125 8.33 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847T3 Issued Date : 2007.06.26 Revised Date : Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 80 30 7 260 300 200 - Typ. 150 - Max. 1 1 0.5 0.6 1.2 600 50 Unit V V V µA µA V V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=80V, IE=0 VEB=6V, IC=0 IC=3A, IB=100mA IC=3A, IB=60mA IC=3A, IB=100mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=500mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD2118T3 Package TO-126 (Pb-free) ...