CYStech Electronics Corp.
Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 1/7
Low Vces...
CYStech Electronics Corp.
Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150A3
BVCEO IC RCESAT (Typ)
50V 3A 125mΩ
Features
Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
Excellent current gain characteristics Complementary to BTB1424A3 Pb-free lead plating and halogen-free package
Symbol
BTD2150A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Ordering Information
Device BTD2150A3-X-TB-G BTD2150A3-X-BK-G
Package
TO-92 (Pb-free lead plating and halogen-free package)
TO-92 (Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box, 10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products Product name
BTD2150A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2015.03.20 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse)
Pd Tj Tstg
Limit
80 50 6 3 7 (Note) 750 150 -55~+150
Unit
V V V A A mW °C °C
C...
