BTD2150L3

CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 BVCEO IC RCESAT (Max) 50V 3A 145mΩ Features Low VCE(sat), VCE(sat)= 0.22V (typical), at IC/IB=2A/0.2A Excellent current gain characteristics Complementary to BTB1424L3 Pb-free lead plating and halogen-free package Symbol BTD2150L3 Outline SOT-223 B：Base C：Collector E：Emitter Ordering Information Device BTD2150L3-0-T3-X Package SOT-223 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTD2150L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date :2014.09.23 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current Power Dissipation @TA=25℃ (Note) VCBO VCEO VEBO IC ICM IBM PD 60 V 50 V 6V 3A 5A 1A 1.5 W Power Dissipation @TC=25℃ PD 5 W Operating Junction and Storage Temperature Range Tj ; Tstg -65~+150 °C Note :The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 square centimet...