BTD2498N3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Spec. No. : C899N3 Issued Date : 2009.12.23 Revised Date : Page No. : 1/6 Description High breakdown voltage. (BVCEO=400V) Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. Complementary to BTB1498N3 Pb-free package Equivalent Circuit BTD2498N3 Outline SOT-23 B : Base C : Collector E : Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits 400 400 7 300 225 556 150 -55~+150 Unit V V V mA mW °C/W °C °C BTD2498N3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C899N3 Issued Date : 2009.12.23 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE *hFE R fT Cob Min. 400 400 7 - - 50 50 0.7 - Typ. - - 0.13 0.11 0.16 - - 100 13 Max. 100 10 100 0.18 0.18 0.3 3.7 270 - 1.3 - Unit V V V nA nA nA V V V V kΩ MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=400V VCE=300V, REB=4kΩ VEB=6V IC=20mA, IB=1mA IC=50mA, IB=5mA IC=100mA, IB=10mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=5MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Orderin...