CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTD2568L3
Spec. No. : C211L3 Issued Date : 2004....
CYStech Electronics Corp.
High
Voltage NPN Epitaxial Planar Transistor
BTD2568L3
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2017.04.12 Page No. : 1/7
Features
High BVCEO, 400V minimum High BVCBO, 550V minimum Pb-free lead plating package
Symbol
BTD2568L3
B：Base C：Collector E：Emitter
Outline
SOT-223
C
E C B
Ordering Information
Device BTD2568L3-0-T3-X
Package
SOT-223 (Pb-free lead plating package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD2568L3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25°C Junction Temperature Storage Temperature
Symbol
VCBO VCES VCEO VEBO
IC ICP IB Pd Tj Tstg
Limits
550 500 400
6 300 1 200
5 150 -55~+150
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2017.04.12 Page No. : 2/7
Unit
V V V V mA A mA W °C °C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCES BVCEO BVEBO ICBO
ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) hFE1 hFE2 *hFE3 *hFE4 fT Cob
Min.
550 500 400
6 50 100 100 40 50 -
Typ.
3.5
Max.
100 100 100 0.2 0.4 0.8 0.9 0.9 250 250 -
Unit
V V V V nA nA n...
