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BTD4M Datasheet

Part Number BTD4M
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Bidirectional Diode
Datasheet BTD4M DatasheetBTD4M Datasheet (PDF)

Ordering number :EN821C BTD4M Silicon Planar Type Bidirectional Diode Features · Small size and light weight. · DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakove.

  BTD4M   BTD4M






Part Number BTD4512F3
Manufacturers CYStech
Logo CYStech
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet BTD4M DatasheetBTD4512F3 Datasheet (PDF)

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 1/ 8 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capab.

  BTD4M   BTD4M







Part Number BTD4
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Bidirectional Diode
Datasheet BTD4M DatasheetBTD4 Datasheet (PDF)

Ordering number :EN821C BTD4M Silicon Planar Type Bidirectional Diode Features · Small size and light weight. · DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakove.

  BTD4M   BTD4M







Bidirectional Diode

Ordering number :EN821C BTD4M Silicon Planar Type Bidirectional Diode Features · Small size and light weight. · DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakover Current Temperature Coefficient of Breakover Voltage Peak Output Voltage VP 5 Symbol VBO1(VBO2) ∆VBO |VBO1–VBO2| IBO1(IBO2) 0.1 Conditions Ratings min 29 typ max 37 3 50 Unit V V µA %/˚C V Basic Circuit Basic Characteristic SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4289MO/9284KI, TS No.821-1/2 BTD4M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severa.


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