CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD5510F3
Spec. No. : C658F3 Issued Date : 2005.08.23 Revised...
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD5510F3
Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2015.09.04 Page No. : 1/7
Description
The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
Features:
High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors Pb-free lead plating package
Equivalent Circuit
BTD5510F3
B
R1≈4k R2≈60
C
E B：Base C：Collector E：Emitter
Outline
TO-263
BCE
Ordering Information
Device BTD5510F3-0-T7-X
Package
Shipping
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
BTD5510F3
Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2015.09.04 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Collector Current(Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=300μs
Symbol
VCBO VCEO VEBO
IC ICM Pd(TA=25℃)
Pd(TC=25℃)
RθJA RθJC Tj Tstg
Limits
250 250 10 10
15 (Note 1)
2
60 ...
