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BTD6055M3 Datasheet

Part Number BTD6055M3
Manufacturers CYStech
Logo CYStech
Description NPN Epitaxial Planar High Current Transistor
Datasheet BTD6055M3 DatasheetBTD6055M3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055M3 Outline SOT-89 B:Base C:Collector E:Emitter BB C CE Absolute Maximum R.

  BTD6055M3   BTD6055M3






NPN Epitaxial Planar High Current Transistor

CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055M3 Outline SOT-89 B:Base C:Collector E:Emitter BB C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Symbol VCBO VCEO VEBO IC ICP Power Dissipation Pd Operating and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic with area measuring 40×40×1 mm BTD6055M3 Limits 15 10 7 6 9 0.6 1 (Note 1) 2 (Note 2) -55 ~ +150 Unit V V V A A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 10 - - V IC=1mA, IB=0 ICBO - - 100 nA VCB=12V, IE=0 IEBO - - 100 nA VEB=7V, IC=0 *VCE(sat) - - 0.2 V IC=3A, IB=20mA *VCE(sat) - - 0.35 V IC=5A, IB=20mA *VBE(sat) - - 1.2 V IC=3A, IB=60mA *VBE(on) - - 1.2 V VCE=0.3V, IC=3A *hFE 450 - - - VCE=0.3V, IC=500mA *hFE 400 - - - VC.


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