BTD669J3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD669J3 Spec. No. : C625J3 Issued Date : 2015.09.14 Revised Date : Page No. : 1/8 Features High breakdown voltage, BVCEO≥ 160V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package Symbol BTD669J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD669J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD669J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C625J3 Issued Date : 2015.09.14 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits 180 160 6 1 3 0.2 1 10 -55~+150 -55~+150 Unit V V V A A A W W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 12.5 125 Unit °C/W °C/W Characteristics...