BTD7521E3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD7521E3 BVCEO IC RCE(SAT) Features High BVCEO Very high current gain Pb-free lead plating package Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2017.06.29 Page No. : 1/5 90V 10A 50mΩ(max) Symbol BTD7521E3 Outline TO-220 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD7521E3-0-UB-X Package TO-220 (Pb-free lead plating) Shipping 50 pcs / tube, 20 tubes/ box , 4 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name BTD7521E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2017.06.29 Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 90 90 9 10 20 (Note) 2 80 62.5 1.56 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE...