CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882J3
BVCEO IC
Spec. No. : C848J3-H Issued Da...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882J3
BVCEO IC
Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2017.11.10 Page No. : 1/7
50V 3A
Features
Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free lead plating and halogen-free package
Symbol
BTD882J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTD882J3-X-T3-G
Package
TO-252 (Pb-free lead plating package)
Shipping 2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD882J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2017.11.10 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
Power Dissipation
Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦350us,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃)
Tj Tstg
Limit
50 50 5 3 7 1 10
150
-55~+150
*1
Unit
V V V A A
W
°C °C
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max
Symbol
RθJA RθJC
Limit
125 12.5
Unit °C/W
Characteristics (Ta=25°C)
Symbo...