BTD882NUJ3

CYStech Electronics Corp. BTD882NUJ3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C630T3 Issued Date : 2017.10.06 Revised Date : Page No. : 1/7 30V 3A Features Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772NUJ3 Pb-free lead plating and halogen-free package Symbol BTD882NUJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter BCE Ordering Information Device BTD882NUJ3-P-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD882NUJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C630T3 Issued Date : 2017.10.06 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Power Dissipation Ta=25℃ Tc=25℃ Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC PD Tj ; Tstg Limit 40 30 9 3 7 *1 1 10 -55~+150 Unit V V V A A W °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max Symbol RθJA RθJC Limit 125 12.5 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO...