CYStech Electronics Corp.
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 1/7
Low Vc...
CYStech Electronics Corp.
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BTD882SA3
BVCEO IC RCESAT (Typ)
50V 3A 125mΩ
Features
Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and halogen-free package
Symbol
BTD882SA3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse)
Pd Tj Tstg
BTD882SA3
ECB
Limit
60 50 5 3 7 (Note) 750 150 -55~+150
Unit
V V V A A mW °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat)
*RCE(sat)
*VBE(sat) *hFE1 *hFE2
fT Cob
Min.
60 50 5 -
-
150 180
-
Typ.
0.25
125
90 13
Max.
1 1 0.5
250
2 560 -
Unit
V V V μA μA V
mΩ
V MHz pF
Test Conditions
IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A
IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE2
Rank Range
P 180~390
E 270~560
Orderin...