BTD882T3S

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3/S Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 40 30 5 3 7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V µA µA V V MHz pF Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range Q 100~200 P 160~320 E 250~500 Ordering Information Device BTB882T3 BTB882...