BTD9065D3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD9065D3 BVCEO IC RCESAT Spec. No. : C847D3 Issued Date : 2011.03.25 Revised Date : Page No. : 1/5 20V 5A 160mΩ(typ.) Features Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A Excellent current gain characteristics Pb-free lead plating package Symbol BTD9065D3 Outline TO-126ML B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Note : *1. Single Pulse , Pw≦380μs,Duty≦2%. Symbol VCBO VCES VCEO VEBO IC ICP PD Tj Tstg BTD9065D3 ECB Limits 50 40 20 8 5 10 1.5 10 150 -55~+150 *1 Unit V V V V A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847D3 Issued Date : 2011.03.25 Revised...