CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD9065D3
BVCEO IC RCESAT
Spec. No. : C847D3 Iss...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD9065D3
BVCEO IC RCESAT
Spec. No. : C847D3 Issued Date : 2011.03.25 Revised Date : Page No. : 1/5
20V 5A 160mΩ(typ.)
Features
Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A Excellent current gain characteristics Pb-free lead plating package
Symbol
BTD9065D3
Outline
TO-126ML
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃)
Junction Temperature Storage Temperature
Note : *1. Single Pulse , Pw≦380μs,Duty≦2%.
Symbol
VCBO VCES VCEO VEBO
IC ICP
PD
Tj Tstg
BTD9065D3
ECB
Limits
50 40 20 8 5 10 1.5
10
150 -55~+150
*1
Unit V V V V
A
W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847D3 Issued Date : 2011.03.25 Revised...