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BTD965A3 Datasheet

Part Number BTD965A3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description NPN Planar Transistor
Datasheet BTD965A3 DatasheetBTD965A3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965A3 BVCEO IC RCESAT(typ) 20V 5A 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package Symbol BTD965A3 Outline TO-92 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage C.

  BTD965A3   BTD965A3






NPN Planar Transistor

CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965A3 BVCEO IC RCESAT(typ) 20V 5A 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package Symbol BTD965A3 Outline TO-92 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦300us,Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg BTD965A3 ECB Limits 60 20 7 5 8 *1 0.75 150 -65~+150 Unit V V V A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 60 20 7 200 230 150 - Typ. 0.35 150 Max. 100 1 100 0.5 0.5 800 50 Unit V V V nA μA nA V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=50V, IE=0 VCE=15V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA IC=3A, IB=60mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Classification Of hFE2 Rank Range Q 230~380 .


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