CYStech Electronics Corp.
Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 1/6
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
BVCEO IC RCESAT(typ)
20V 5A 0.12Ω
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
Symbol
BTD965A3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage C.
NPN Planar Transistor
CYStech Electronics Corp.
Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 1/6
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
BVCEO IC RCESAT(typ)
20V 5A 0.12Ω
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
Symbol
BTD965A3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦300us,Duty≦2%.
Symbol
VCBO VCEO VEBO
IC ICP Pd Tj Tstg
BTD965A3
ECB
Limits
60 20 7 5 8 *1 0.75 150 -65~+150
Unit
V V V
A
W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO ICEO IEBO *VCE(sat) *VCE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob
Min.
60 20 7 200 230 150 -
Typ.
0.35 150
Max.
100 1 100 0.5 0.5 800 50
Unit
V V V nA μA nA V V MHz pF
Test Conditions
IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=50V, IE=0 VCE=15V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA IC=3A, IB=60mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Classification Of hFE2
Rank Range
Q 230~380
.