BTN1053I3

CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7 NPN Epitaxial Planar Transistor BTN1053I3 BVCEO IC RCESAT(MAX) 80V 2.5A 150mΩ Features Excellent HFE Characteristics up to 1A Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA 5A peak pulse current Pb-free lead plating and halogen-free package Symbol BTN1053I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Ordering Information Device BTN1053I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name BTN1053I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Range Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj ; Tstg Limits 150 80 6 2.5 5 1.5 10 -55~+150 Unit V V V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol...