BTN3904N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN3904N3 Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 1/7 Description  The BTN3904N3 is designed for general purpose switching amplifier applications.  Complementary to BTP3906N3.  ESD JEDEC rated HBM class 3B(>8KV).  Pb-free lead plating and halogen-free package Symbol BTN3904N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25C) Power Dissipation (TC=25C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition BTN3904N3 Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 60 40 6 200 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW C/W C/W C C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2019.11.21 Page No. : 2/7 Characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=10μA BVCEO BVEBO 40 6 - - V IC=1mA - V IE=10μA ICEX - - 50 nA VCE=30V, VBE=-3V *VCE(sat)1 - 0.1 0.2 V IC=10mA, IB=1mA *VCE(sat)2 - 0.15 0.3 V IC=50mA, IB=5mA *VBE(sat)1 0.65 0.75 0.85 V IC=10mA, IB=1mA *VBE(sat)2 *hFE1 40 0.85 0.95 -- V IC=50mA, IB=5mA VCE=1V, IC=100μA *hFE2 70 - - VCE=1V, I...