BTN5551K3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Page No. : 1/6 Features High breakdown voltage, BVCEO≥ 160V Pb-free lead plating package Symbol BTN5551K3 Outline TO-92L B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Note : Pulse test, pulse width≤300μs, duty cycle≤2% Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 180 160 6 600 2 (Note) 200 900 139 -55~+150 Unit V V V mA A mA mW °C/W °C BTN5551K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208K3 Issued Date : 2012.06.28 Revised Date : 2012.10.02 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 100 100 50 120 100 - Typ. 0.1 - Max. 50 50 0.15 0.2 1 1 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=120V VEB=6V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device BT...