BTN8050A3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2013.05.21 Page No. : 1/5 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , IC = 1.5A Low VCE(sat) Complementary to BTP8550A3. Pb-free lead plating and halogen-free package Symbol BTN8050A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg BTN8050A3 ECB Limits 40 25 6 1.5 0.5 625 150 -55~+150 Unit V V V A A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2013.05.21 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 25 6 120 160 80 100 - Typ. 6 Max. 100 100 0.5 1.2 1 500 20 Unit V V V nA nA V V V MHz pF Test Conditions IC=100μA IC=2mA IE=100μA VCB=35V VEB=6V IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range D 160~320 E 250~500 Ordering Info...