BTN853L3

CYStech Electronics Corp. Spec. No. : C821L3 Issued Date : 2010.02.05 Revised Date : 2017.08.21 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTN853L3 BVCEO ID RCESAT(max) 60V 5.2A 55mΩ Features Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A 5.2A continuous collector current (10.4A peak) Very low saturation voltages Excellent gain characteristics Pb-free lead plating and halogen-free package Symbol BTN853L3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Ordering Information Device BTN853L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTN853L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C821L3 Issued Date : 2010.02.05 Revised Date : 2017.08.21 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Power Dissipation @ TA=25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB IBP Ptot Tj Tstg Limits 60 60 6 5.2 10.2 (Note 1) 2 4 0.7 (Note 2) 1.7 (Note 3) 2 (Note 4) -55~+150 -55~+150 Unit V A W °C Thermal Data Paramete...