BTP2907AL3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP2907AL3 Spec. No. : C317L3-H Issued Date : 2003.04.15 Revised Date : 2006.07.04 Page No. : 1/5 Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low VCE(sat) High switching speed. Complementary to BTN2222AL3 Pb-free package Symbol BTP2907AL3 Outline SOT-223 C B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg -60 -60 -5 -800 1 (Note) 150 -55~+150 V V V mA W °C °C Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper area equal to 36mm×18mm. The mounting pad for the collector lead is 6 cm² minimum. BTP2907AL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C317L3-H Issued Date : 2003.04.15 Revised Date : 2006.07.04 Page No. : 2/5 Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVCBO -60 - - *BVCEO -60 - - BVEBO -5 - - ICBO - - -10 ICEX - - -50 *VCE(sat) - -0.2 -0.4 *VCE(sat) - -0.5 -1.6 *VBE(sat) - - -1.3 *VBE(sat) - - -2.6 *hFE 75 - - *hFE 100 - - *hFE 100 - - *hFE 100 - 300 *hFE 50 - - ...