BTP9050N3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor BTP9050N3 Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : 2014.08.06 Page No. : 1/8 Description  High breakdown voltage. (BVCEO=-500V)  Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.  Complementary to BTNA45N3  Pb-free lead plating and halogen-free package Symbol BTP9050N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTP9050N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTP9050N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C619N3 Issued Date : 2012.08.21 Revised Date : 2014.08.06 Page No. : 2/8 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current , single pulse, pulse width tp<1ms Peak Base Current, single pulse, pulse width tp<1ms Power Dissipation Operating Junction and Storage Temperature Range VCBO VCEO VEBO IC ICM IBM PD Tj ; Tstg Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint. Limits -500 -500 -5 -150 -500 -200 300 (Note) -55~+150 Unit V V V mA mA mA mW C Therma...