CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
BTP949L3
Spec. No. : C657L3 Issued Date : 2005.10.14 Re...
CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
BTP949L3
Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 1/6
Features
Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A 6A continuous current(up to 20A peak) Excellent current gain linearity Pb-free package
Symbol
BTP949L3
Outline
C
SOT-223
B：Base C：Collector E：Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base
Voltage
VCBO
-50 V
Collector-Emitter
Voltage
VCEO
-30 V
Emitter-Base
Voltage
VEBO
-6 V
Collector Current (DC) Collector Current (Pulse)
IC ICP
-5.5 -20 (Note 1)
A
Power Dissipation @ TA=25℃
Ptot
3 (Note 2)
W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper
equal to 4 square inch minimum.
BTP949L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
*BVCEO BVCBO BVCER BVEBO
ICER ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob ton
toff
Min.
-30 -50 -50 -6
100 100 60 -
-
Typ.
-60 -100 -190 -380 -1.1 200 200 80 10 100 122 120
130
Max.
-50 -50 -10 -75 -140 -270 -440 -1.25 -1.06 300 -
-
Unit
V V V V µA nA nA mV mV mV mV V...
