Current Transistor. BTP955M3 Datasheet

BTP955M3 Datasheet PDF


Part Number

BTP955M3

Description

PNP Epitaxial Planar High Current Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTP955M3 Datasheet


BTP955M3
CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.12.27
Revised Date : 2018.06.12
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955M3
Features
3 Amps continuous current, up to 10 Amps peak current
Very low saturation voltage
Excellent gain characteristics specified up to 3 Amps
Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A
Pb-free lead plating and halogen-free package
Symbol
BTP955M3
Outline
SOT-89
BBase
CCollector
EEmitter
BB C CE
Ordering Information
Device
BTP955M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel
Product rank, zero for no rank products
Product name
BTP955M3
CYStek Product Specification

BTP955M3
CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.12.27
Revised Date : 2018.06.12
Page No. : 2/6
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Power Dissipation
Pd
ESD susceptibility
Operating and Storage Temperature Range
Tj ; Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 25×25×1.6 mm
2. When mounted on ceramic with area measuring 50×50×1.6 mm
3. Human body model, 1.5kΩ in series with 100pF
Limits
-180
-140
-7
-3
-10
-1
0.6
1.5 (Note 1)
2.1 (Note 2)
4000 Note 3)
-55 ~ +150
Unit
V
V
V
A
A
A
W
V
C
Characteristics (Ta=25C, unless otherwise specified)
Symbol
BVCBO
BVCER
*BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
hFE1
hFE2
*hFE3
*hFE4
fT
Cob
ton
toff
Min.
-180
-180
-140
-7
-
-
-
-
-
-
-
-
-
100
100
75
-
-
-
Typ. Max. Unit
Test Conditions
-220 -
-220 -
V IC=-100μA
V IC=-1μA, RBE1kΩ
-170 -
-8.3 -
V IC=-10mA
V IE=-100μA
- -50 nA VCB=-150V
- -50 nA VCE=-150V, RBE1kΩ
- -10 nA VEB=-6V
-30 -60 mV IC=-100mA, IB=-5mA
-50 -75 mV IC=-500mA, IB=-50mA
-110 -165 mV IC=-1A, IB=-100mA
-220 -330 mV IC=-3A, IB=-300mA
-910 -1010
mV IC=-3A, IB=-300mA
-800 -900 mV VCE=-5V, IC=-3A
- - - VCE=-5V, IC=-10mA
- 300 - VCE=-5V, IC=-1A
- - - VCE=-5V, IC=-3A
10 -
- VCE=-5V, IC=-10A
120 - MHz VCE=-10V, IC=-100mA, f=50MHz
35 - pF VCB=-10V, f=1MHz
50 ns IC=-1A, IB1=-100mA, IB2=100mA,
700 ns VCC=-50V
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
BTP955M3
CYStek Product Specification





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