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BTS100 characteristic Datasheet PDF

Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)

Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)

 

 

 

Part Number BTS100
Description Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
Feature Smart Highside Power Switch TEMPFET® Fe atures q q q q BTS 100 P channel Enha ncement mode Temperature sensor with th yristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.
3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-sourc e voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous dra in current, TC = 30 °C ISO drain curre nt TC = 85 ˚C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit cu rrent, Symbol Values – 50 – 50 ± 2 0 – 8.
0 – 1.
5 – 32 – 25 500 40 .
Manufacture Siemens Semiconductor Group
Datasheet
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BTS100

 

 

 


 

 

 

Part Number BTS100
Description Smart Highside Power Switch
Feature TEMPFET® BTS 100 Smart Highside Power Switch Features q q q q P channel Enh ancement mode Temperature sensor with t hyristor characteristic The drain pin i s electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 5 0 V ID –8A RDS(on) 0.
3 Ω Package TO-220AB Ordering Code C67078-A5007-A 2 Maximum Ratings Parameter Drain-sour ce voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous dr ain current, TC = 30 °C ISO drain curr ent Symbol Values – 50 – 50 ± 20 8.
0 – 1.
5 – 32 – 25 500 40 – 55 + 150 E 55/150/56 K/W ≤ 3.
1 75 °C – W A Unit V VDS VDGR VGS ID ID-I .
Manufacture Infineon Technologies AG
Datasheet
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BTS100

 

 

 

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