R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
BU103DH
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1....
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
BU103DH
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Charger and Switch-mode power supplies
2.FEATURES
High
voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3.PACKAGE
1 VD
TO-92
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Emitter(E) 2 Collector(C) 3 Base(B)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base
Voltage
Collector-Emittor
Voltage
Emittor- Base
Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VCBO VCEO VEBO
IC
Ptot
Tj Tstg
800 500 9 1.6 0.8 13 150 -55~150
V V V A
W
℃ ℃
TEST CONDITION
VALUE
UNIT
MIN TYP MAX
Collector-Base
Voltage Collector-Emittor
Voltage Emittor-Base
Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation
Voltage Base-Emittor Saturation
Voltage Rising Time Falling Time Storage Time
Typical Frequency
*: Pulse test tp≤300μs,δ≤2%
BVCBO BVCEO BVEBO
ICBO ICEO IEBO
hFE*
VCE
* sat
VBE
* sat
tr
tf
ts
fT
IC=1mA,IE=0 IC=1mA ,IB=0 IE=1mA,IC=0 VCB=800V, IE=0 VCE=500V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.5A IC=1A, IB=0.5A
800 500
9
8 20
IC=250mA (UI9600)
VCE=10V,IC=0.1A, f=1MHz
1.5 5
V V V 10 μA 20 μA 10 μ...