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BU2506AF Datasheet

Part Number BU2506AF
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU2506AF DatasheetBU2506AF Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·Intended for use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (P.

  BU2506AF   BU2506AF






Part Number BU2506AF
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU2506AF DatasheetBU2506AF Datasheet (PDF)

isc Silicon NPN Power Transistor BU2506AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage .

  BU2506AF   BU2506AF







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·Intended for use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 5 8 3 5 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com BU2506AF SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 Collector-emitter sustaining voltage IC=100mA ;IB=0, IE=1mA ;IC=0 IC=3A ;IB=0.79A IC=3A ;IB=0.79A VCE=RatedVCE ;VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V 700 V Emitter-base breakdown voltage 7.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.1 1.0 2.0 0.1 V Collector cut-off current mA Emitter cut-off current mA DC current gain 12 DC current gain 3.8 5.5 7.5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Tra.


2009-05-11 : MQ2219    MQ2218A    MQ2219A    BU505    BU505DF    BU506    BU506D    BU506DF    BU508    BU508A   


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