SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2506DX
www.datasheet4u.com
DESCRIPTION...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2506DX
www.datasheet4u.com
DESCRIPTION ·With TO-3PML package ·High
voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 7.5 5 8 3 5 45 150 -55~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward
voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=3.0A ;IB=0.79 A IC=3.0A ;IB=0.79 A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=0.3 A ; VCE=5V IC=3.0A ; VCE=5V IF=3.0A VCB=10V;IE=0;f=1.0MHz 3.8 MIN 700 7.5
www.datasheet4u.com
BU2506DX
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE...
