isc Silicon NPN Power Transistor
BU2515DF
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·...
isc Silicon NPN Power Transistor
BU2515DF
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
PC monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7.5
V
IC
Collector Current- Continuous
9
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
5
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7.5
A
45
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BU2515DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA; IB= 0
800
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation
Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 0.9A
VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0; TC...