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BU406H Datasheet

Part Number BU406H
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU406H DatasheetBU406H Datasheet (PDF)

isc Silicon NPN Power Transistor BU406H DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Co.

  BU406H   BU406H






Part Number BU406H
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet BU406H DatasheetBU406H Datasheet (PDF)

BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 .

  BU406H   BU406H







NPN Transistor

isc Silicon NPN Power Transistor BU406H DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 0.5A VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V fT Current-Gain—Band.


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