isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.5μs(Max) ·Lo...
isc Silicon NPN Power Transistor
DESCRIPTION ·High
Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.5μs(Max) ·Low Saturation
Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
400
VCEV
Collector-Emitter
Voltage
400
VCEO
Collector-Emitter
Voltage
200
VEBO
Emitter-Base
Voltage
6
IC
Collector Current-Continuous
7
ICM
Collector Current-Peak
10
IB
Base Current
4
PC
Collector Power Dissipation @ TC=25℃
60
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 2.08 ℃/W
BU408D
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BU408D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA ;IB= 0
200
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 6A; IB= 1.2A
1.0
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 6A; IB= 1.2A
1.5
V
hFE
DC Current Gain
IC= 2A; VCE= 5V;
15
ICEV
Collector Cutoff Current
VCE= 400V; VBE= -1.5V
15 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
400 mA
fT
...
