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BU4507AF Datasheet

Part Number BU4507AF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4507AF DatasheetBU4507AF Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCE.

  BU4507AF   BU4507AF






Part Number BU4507AZ
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4507AF DatasheetBU4507AZ Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VC.

  BU4507AF   BU4507AF







Part Number BU4507AX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4507AF DatasheetBU4507AX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCE.

  BU4507AF   BU4507AF







Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4 4 0.3 0.21 MAX. 1500 800 8 15 45 3.0 0.45 UNIT V V A A W V A A µs µs Ths ≤ 25 ˚C IC = 4 A; IB = 1 A f = 16kHz f = 56kHz ICsat = 4 A; f = 16kHz ICsat = 4 A; f = 56kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature J.


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